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US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 1 for "Semiconductor structure and manufacturing method therefor" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,148, issued on Sept. 1, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor structure and manufacturing m... और पढ़ें


US Patent Issued to SK hynix on Sept. 1 for "Semiconductor device and method for fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,149, issued on Sept. 1, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "Semiconductor device and method for fabricating the same... और पढ़ें


US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Semiconductor device" (South Korean Inventor)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,150, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor device" was invented by Junhye... और पढ़ें


US Patent Issued to NANYA TECHNOLOGY on Sept. 1 for "Semiconductor structure including polysilicon as bottom layer of bit line structure and method of manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,151, issued on Sept. 1, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor structure including polysilicon as... और पढ़ें


US Patent Issued to SK hynix on Sept. 1 for "Semiconductor device and method for fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,152, issued on Sept. 1, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "Semiconductor device and method for fabricating the same... और पढ़ें


US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 1 for "Semiconductor structure and method for manufacturing same" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,153, issued on Sept. 1, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor structure and method for manu... और पढ़ें


US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,154, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device" was invented by Hyeono... और पढ़ें


US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,155, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor device" was invented by Sungeu... और पढ़ें


US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 1 for "Semiconductor memory structure with support frame in staircase region and method of making the same" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,156, issued on Sept. 1, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor memory structure with support... और पढ़ें


US Patent Issued to GlobalFoundries U.S. on Sept. 1 for "Memory cell including dual-antifuse device, memory structure, and operating method" (Indian, American Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,157, issued on Sept. 1, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.). "Memory cell including dual-antifuse device, memory struct... और पढ़ें